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inchange semiconductor product specification silicon npn power transistors 2SC5296 description ? ? with to-3pml package ? high breakdown voltage, high reliability . ? high speed ? built in damper diode applications ? ultrahigh-definition crt display ? horizontal deflection output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 6 v i c collector current 8 a i cm collector current-peak 16 a t c =25 ?? 60 p c collector power dissipation 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pml) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SC5296 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =5a;i b =1.25 a 5 v v besat base-emitter saturation voltage i c =5a;i b =1.25 a 1.5 v v ceo(sus) collector-emitter sustaining voltage i c =100ma;i b =0 800 v i ebo emitter cut-off current v eb =4v i c =0 40 130 ma i cbo collector cut-off current v cb =800v ;i e =0 10 | a i ces collector cut-off current v ce =1500v; r be =0 1 ma h fe-1 dc current gain i c =1 a ; v ce =5v 15 25 h fe-2 dc current gain i c =5a ; v ce =5v 4 7 switching times t stg storage time 3.0 | s t f fall time i c =4a;r l =50 |? i b1 =0.8a; i b2 =-1.6a v cc =200v 0.1 0.2 | s
inchange semiconductor product specification 3 silicon npn power transistors 2SC5296 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC5296

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